元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
---|---|---|---|---|
SI1400DL-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V SC-70-6 | 495 | 1:$0.74000 25:$0.51960 100:$0.44550 250:$0.38476 500:$0.33076 1,000:$0.25650 |
SIR882DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V 8-SOIC | 2,836 | 1:$2.84000 25:$2.18720 100:$1.98450 250:$1.78200 500:$1.53900 1,000:$1.29600 |
SIR882DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V 8-SOIC | 2,836 | 1:$2.84000 25:$2.18720 100:$1.98450 250:$1.78200 500:$1.53900 1,000:$1.29600 |
SIR882DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V 8-SOIC | 0 | 3,000:$1.09350 6,000:$1.05300 15,000:$1.01250 30,000:$0.99225 75,000:$0.97200 |
SI1400DL-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V SC-70-6 | 0 | 3,000:$0.20925 6,000:$0.19575 15,000:$0.18225 30,000:$0.17213 75,000:$0.16875 150,000:$0.16200 |
SIE868DF-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 40V POLARPAK | 5,945 | 1:$2.84000 25:$2.18720 100:$1.98450 250:$1.78200 500:$1.53900 1,000:$1.29600 |
SIE868DF-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 40V POLARPAK | 5,945 | 1:$2.84000 25:$2.18720 100:$1.98450 250:$1.78200 500:$1.53900 1,000:$1.29600 |
SIE868DF-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 40V POLARPAK | 3,000 | 3,000:$1.09350 6,000:$1.05300 15,000:$1.01250 30,000:$0.99225 75,000:$0.97200 |
類別: | 分離式半導體產(chǎn)品 |
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FET 型: | MOSFET N 通道,金屬氧化物 |
FET 特點: | 邏輯電平門 |
漏極至源極電壓(Vdss): | 20V |
電流 - 連續(xù)漏極(Id) @ 25° C: | 1.6A |
開態(tài)Rds(最大)@ Id, Vgs @ 25° C: | 150 毫歐 @ 1.7A,4.5V |
Id 時的 Vgs(th)(最大): | 600mV @ 250µA |
閘電荷(Qg) @ Vgs: | 4nC @ 4.5V |
輸入電容 (Ciss) @ Vds: | - |
功率 - 最大: | 568mW |
安裝類型: | 表面貼裝 |
封裝/外殼: | 6-TSSOP,SC-88,SOT-363 |
供應商設備封裝: | SC-70-6 |
包裝: | 剪切帶 (CT) |