元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
---|---|---|---|---|
PSMN030-60YS,115 | NXP Semiconductors | MOSFET N-CH LFPAK | 1,541 | 1:$0.66000 10:$0.58200 25:$0.51440 100:$0.44840 250:$0.39036 500:$0.33228 |
PSMN030-60YS,115 | NXP Semiconductors | MOSFET N-CH LFPAK | 0 | 1,500:$0.25808 3,000:$0.23389 7,500:$0.21775 10,500:$0.20969 37,500:$0.20163 75,000:$0.19840 150,000:$0.19356 |
類別: | 分離式半導(dǎo)體產(chǎn)品 |
---|---|
FET 型: | MOSFET N 通道,金屬氧化物 |
FET 特點(diǎn): | 標(biāo)準(zhǔn) |
漏極至源極電壓(Vdss): | 60V |
電流 - 連續(xù)漏極(Id) @ 25° C: | 29A |
開態(tài)Rds(最大)@ Id, Vgs @ 25° C: | 24.7 毫歐 @ 15A,10V |
Id 時(shí)的 Vgs(th)(最大): | 4V @ 1mA |
閘電荷(Qg) @ Vgs: | 13nC @ 10V |
輸入電容 (Ciss) @ Vds: | 686pF @ 30V |
功率 - 最大: | 56W |
安裝類型: | 表面貼裝 |
封裝/外殼: | SC-100,SOT-669,4-LFPAK |
供應(yīng)商設(shè)備封裝: | LFPAK,Power-SO8 |
包裝: | 剪切帶 (CT) |