分離式半導(dǎo)體產(chǎn)品 PSMN3R3-80ES,127品牌、價(jià)格、PDF參數(shù)

PSMN3R3-80ES,127 • 品牌、價(jià)格
元器件型號(hào) 廠商 描述 數(shù)量 價(jià)格
PSMN3R3-80ES,127 NXP Semiconductors MOSFET N-CH 80V 120A I2PAK 470 1:$4.53000
10:$4.04600
25:$3.64160
100:$3.31790
250:$2.99424
500:$2.68672
1,000:$2.26590
2,500:$2.15260
5,000:$2.07168
PMV30UN,215 NXP Semiconductors MOSFET N-CH 20V 5.7A SOT-23 21,000 3,000:$0.14000
6,000:$0.13100
15,000:$0.12200
30,000:$0.11500
75,000:$0.11300
150,000:$0.10800
2N7002BKW,115 NXP Semiconductors MOSFET N-CH 60V 310MA SOT323 3,000 3,000:$0.05060
2N7002BKW,115 NXP Semiconductors MOSFET N-CH 60V 310MA SOT323 13,916 1:$0.39000
10:$0.35400
25:$0.25480
100:$0.19830
250:$0.12456
500:$0.10616
1,000:$0.07233
PSMN4R3-100ES,127 NXP Semiconductors MOSFET N-CH 100V 120A I2PAK 500 1:$4.53000
10:$4.04600
25:$3.64160
100:$3.31790
250:$2.99424
500:$2.68672
1,000:$2.26590
2,500:$2.15260
5,000:$2.07168
PSMN3R3-80ES,127 • PDF參數(shù)
類別: 分離式半導(dǎo)體產(chǎn)品
FET 型: MOSFET N 通道,金屬氧化物
FET 特點(diǎn): 標(biāo)準(zhǔn)
漏極至源極電壓(Vdss): 80V
電流 - 連續(xù)漏極(Id) @ 25° C: 120A
開態(tài)Rds(最大)@ Id, Vgs @ 25° C: 3.3 毫歐 @ 25A,10V
Id 時(shí)的 Vgs(th)(最大): 4V @ 1mA
閘電荷(Qg) @ Vgs: 139nC @ 10V
輸入電容 (Ciss) @ Vds: 9961pF @ 40V
功率 - 最大: 338W
安裝類型: 通孔
封裝/外殼: TO-262-3,長引線,I²Pak,TO-262AA
供應(yīng)商設(shè)備封裝: I2PAK
包裝: 管件
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