| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| PSMN3R3-80ES,127 | NXP Semiconductors | MOSFET N-CH 80V 120A I2PAK | 470 | 1:$4.53000 10:$4.04600 25:$3.64160 100:$3.31790 250:$2.99424 500:$2.68672 1,000:$2.26590 2,500:$2.15260 5,000:$2.07168 |
| PMV30UN,215 | NXP Semiconductors | MOSFET N-CH 20V 5.7A SOT-23 | 21,000 | 3,000:$0.14000 6,000:$0.13100 15,000:$0.12200 30,000:$0.11500 75,000:$0.11300 150,000:$0.10800 |
| 2N7002BKW,115 | NXP Semiconductors | MOSFET N-CH 60V 310MA SOT323 | 3,000 | 3,000:$0.05060 |
| 2N7002BKW,115 | NXP Semiconductors | MOSFET N-CH 60V 310MA SOT323 | 13,916 | 1:$0.39000 10:$0.35400 25:$0.25480 100:$0.19830 250:$0.12456 500:$0.10616 1,000:$0.07233 |
| PSMN4R3-100ES,127 | NXP Semiconductors | MOSFET N-CH 100V 120A I2PAK | 500 | 1:$4.53000 10:$4.04600 25:$3.64160 100:$3.31790 250:$2.99424 500:$2.68672 1,000:$2.26590 2,500:$2.15260 5,000:$2.07168 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 標(biāo)準(zhǔn) |
| 漏極至源極電壓(Vdss): | 80V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 120A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 3.3 毫歐 @ 25A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 4V @ 1mA |
| 閘電荷(Qg) @ Vgs: | 139nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 9961pF @ 40V |
| 功率 - 最大: | 338W |
| 安裝類型: | 通孔 |
| 封裝/外殼: | TO-262-3，長引線，I²Pak，TO-262AA |
| 供應(yīng)商設(shè)備封裝: | I2PAK |
| 包裝: | 管件 |