元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
---|---|---|---|---|
PSMN3R3-80ES,127 | NXP Semiconductors | MOSFET N-CH 80V 120A I2PAK | 470 | 1:$4.53000 10:$4.04600 25:$3.64160 100:$3.31790 250:$2.99424 500:$2.68672 1,000:$2.26590 2,500:$2.15260 5,000:$2.07168 |
PMV30UN,215 | NXP Semiconductors | MOSFET N-CH 20V 5.7A SOT-23 | 21,000 | 3,000:$0.14000 6,000:$0.13100 15,000:$0.12200 30,000:$0.11500 75,000:$0.11300 150,000:$0.10800 |
2N7002BKW,115 | NXP Semiconductors | MOSFET N-CH 60V 310MA SOT323 | 3,000 | 3,000:$0.05060 |
2N7002BKW,115 | NXP Semiconductors | MOSFET N-CH 60V 310MA SOT323 | 13,916 | 1:$0.39000 10:$0.35400 25:$0.25480 100:$0.19830 250:$0.12456 500:$0.10616 1,000:$0.07233 |
PSMN4R3-100ES,127 | NXP Semiconductors | MOSFET N-CH 100V 120A I2PAK | 500 | 1:$4.53000 10:$4.04600 25:$3.64160 100:$3.31790 250:$2.99424 500:$2.68672 1,000:$2.26590 2,500:$2.15260 5,000:$2.07168 |
類別: | 分離式半導(dǎo)體產(chǎn)品 |
---|---|
FET 型: | MOSFET N 通道,金屬氧化物 |
FET 特點(diǎn): | 標(biāo)準(zhǔn) |
漏極至源極電壓(Vdss): | 80V |
電流 - 連續(xù)漏極(Id) @ 25° C: | 120A |
開態(tài)Rds(最大)@ Id, Vgs @ 25° C: | 3.3 毫歐 @ 25A,10V |
Id 時(shí)的 Vgs(th)(最大): | 4V @ 1mA |
閘電荷(Qg) @ Vgs: | 139nC @ 10V |
輸入電容 (Ciss) @ Vds: | 9961pF @ 40V |
功率 - 最大: | 338W |
安裝類型: | 通孔 |
封裝/外殼: | TO-262-3,長引線,I²Pak,TO-262AA |
供應(yīng)商設(shè)備封裝: | I2PAK |
包裝: | 管件 |