元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
---|---|---|---|---|
PSMN9R5-30YLC,115 | NXP Semiconductors | MOSFET N-CH 30V 44A LL LFPAK | 1,805 | 1:$0.56000 10:$0.47600 25:$0.41680 100:$0.35690 250:$0.30956 500:$0.26218 |
BUK6211-75C,118 | NXP Semiconductors | MOSFET N-CH TRENCH DPAK SOT428 | 4,425 | 1:$1.78000 10:$1.57400 25:$1.42120 100:$1.24360 250:$1.09064 500:$0.96726 1,000:$0.76493 |
BSH201,215 | NXP Semiconductors | MOSFET P-CH 60V 300MA SOT-23 | 10,227 | 1:$0.49000 10:$0.38100 25:$0.32120 100:$0.26170 250:$0.21676 500:$0.17908 1,000:$0.13413 |
BUK6211-75C,118 | NXP Semiconductors | MOSFET N-CH TRENCH DPAK SOT428 | 4,425 | 1:$1.78000 10:$1.57400 25:$1.42120 100:$1.24360 250:$1.09064 500:$0.96726 1,000:$0.76493 |
BSH201,215 | NXP Semiconductors | MOSFET P-CH 60V 300MA SOT-23 | 9,000 | 3,000:$0.12000 6,000:$0.11200 15,000:$0.10500 30,000:$0.09600 75,000:$0.09300 150,000:$0.08900 |
類別: | 分離式半導(dǎo)體產(chǎn)品 |
---|---|
FET 型: | MOSFET N 通道,金屬氧化物 |
FET 特點(diǎn): | 邏輯電平門 |
漏極至源極電壓(Vdss): | 30V |
電流 - 連續(xù)漏極(Id) @ 25° C: | 44A |
開態(tài)Rds(最大)@ Id, Vgs @ 25° C: | 9.8 毫歐 @ 15A,10V |
Id 時(shí)的 Vgs(th)(最大): | 1.95V @ 1mA |
閘電荷(Qg) @ Vgs: | 10.4nC @ 10V |
輸入電容 (Ciss) @ Vds: | 681pF @ 15V |
功率 - 最大: | 34W |
安裝類型: | 表面貼裝 |
封裝/外殼: | SC-100,SOT-669,4-LFPAK |
供應(yīng)商設(shè)備封裝: | LFPAK,Power-SO8 |
包裝: | 剪切帶 (CT) |