分離式半導(dǎo)體產(chǎn)品 PSMN5R9-30YL,115品牌、價(jià)格、PDF參數(shù)

PSMN5R9-30YL,115 • 品牌、價(jià)格
元器件型號(hào) 廠商 描述 數(shù)量 價(jià)格
PSMN5R9-30YL,115 NXP Semiconductors MOSFET N-CH 30V 78A SOT669 1,500 1,500:$0.25808
3,000:$0.23389
7,500:$0.21775
10,500:$0.20969
37,500:$0.20163
75,000:$0.19840
150,000:$0.19356
PSMN045-80YS,115 NXP Semiconductors MOSFET N-CH LFPAK 1,500 1,500:$0.25808
3,000:$0.23389
7,500:$0.21775
10,500:$0.20969
37,500:$0.20163
75,000:$0.19840
150,000:$0.19356
PSMN3R7-30YLC,115 NXP Semiconductors MOSFET N-CH 30V 100A LFPAK 999 1:$0.81000
10:$0.71200
25:$0.62920
100:$0.54820
250:$0.47724
500:$0.40624
PSMN3R7-30YLC,115 NXP Semiconductors MOSFET N-CH 30V 100A LFPAK 999 1:$0.81000
10:$0.71200
25:$0.62920
100:$0.54820
250:$0.47724
500:$0.40624
PSMN3R7-30YLC,115 NXP Semiconductors MOSFET N-CH 30V 100A LFPAK 0 1,500:$0.31552
3,000:$0.28594
7,500:$0.26622
10,500:$0.25636
37,500:$0.24650
75,000:$0.24256
150,000:$0.23664
PSMN5R9-30YL,115 • PDF參數(shù)
類別: 分離式半導(dǎo)體產(chǎn)品
FET 型: MOSFET N 通道,金屬氧化物
FET 特點(diǎn): 邏輯電平門
漏極至源極電壓(Vdss): 30V
電流 - 連續(xù)漏極(Id) @ 25° C: 78A
開態(tài)Rds(最大)@ Id, Vgs @ 25° C: 6.1 毫歐 @ 20A,10V
Id 時(shí)的 Vgs(th)(最大): 2.15V @ 1mA
閘電荷(Qg) @ Vgs: 21.3nC @ 10V
輸入電容 (Ciss) @ Vds: 1226pF @ 15V
功率 - 最大: 63W
安裝類型: 表面貼裝
封裝/外殼: SC-100,SOT-669,4-LFPAK
供應(yīng)商設(shè)備封裝: LFPAK,Power-SO8
包裝: 帶卷 (TR)
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