元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
---|---|---|---|---|
PSMN013-30LL,115 | NXP Semiconductors | MOSFET N-CH 30V QFN3333 | 1,386 | 1:$0.85000 10:$0.74400 25:$0.65760 100:$0.57300 250:$0.49876 500:$0.42456 |
PSMN6R0-30YL,115 | NXP Semiconductors | MOSFET N-CH 30V 79A LFPAK | 2,654 | 1:$0.78000 10:$0.67900 25:$0.60040 100:$0.52320 250:$0.45544 500:$0.38770 |
PSMN6R0-30YL,115 | NXP Semiconductors | MOSFET N-CH 30V 79A LFPAK | 1,500 | 1,500:$0.30112 3,000:$0.27289 7,500:$0.25407 10,500:$0.24466 37,500:$0.23525 75,000:$0.23149 150,000:$0.22584 |
類別: | 分離式半導(dǎo)體產(chǎn)品 |
---|---|
FET 型: | MOSFET N 通道,金屬氧化物 |
FET 特點(diǎn): | 邏輯電平門 |
漏極至源極電壓(Vdss): | 30V |
電流 - 連續(xù)漏極(Id) @ 25° C: | 21A |
開態(tài)Rds(最大)@ Id, Vgs @ 25° C: | 13 毫歐 @ 5A,10V |
Id 時(shí)的 Vgs(th)(最大): | 2.15V @ 1mA |
閘電荷(Qg) @ Vgs: | 12.2nC @ 10V |
輸入電容 (Ciss) @ Vds: | 768pF @ 15V |
功率 - 最大: | 41W |
安裝類型: | 表面貼裝 |
封裝/外殼: | 8-VDFN 裸露焊盤 |
供應(yīng)商設(shè)備封裝: | 8-QFN(3.3x3.3) |
包裝: | 剪切帶 (CT) |