| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| SI8461DB-T2-E1 | Vishay Siliconix | MOSFET P-CH D-S 20V MICROFOOT | 9,000 | 3,000:$0.21750 6,000:$0.20250 15,000:$0.19500 30,000:$0.18750 75,000:$0.18450 150,000:$0.18000 |
| SQ1431EH-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 3A SC70 | 677 | 1:$0.66000 25:$0.46200 100:$0.39600 250:$0.34200 500:$0.29400 1,000:$0.22800 |
| SQ1431EH-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 3A SC70 | 677 | 1:$0.66000 25:$0.46200 100:$0.39600 250:$0.34200 500:$0.29400 1,000:$0.22800 |
| SQ1431EH-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 3A SC70 | 0 | 3,000:$0.18600 6,000:$0.17400 15,000:$0.16200 30,000:$0.15300 75,000:$0.15000 150,000:$0.14400 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET P 通道，金屬氧化物 |
| FET 特點(diǎn): | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 20V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | - |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 100 毫歐 @ 1.5A，4.5V |
| Id 時(shí)的 Vgs(th)（最大）: | 1V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 24nC @ 8V |
| 輸入電容 (Ciss) @ Vds: | 610pF @ 10V |
| 功率 - 最大: | 780mW |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 4-XFBGA，CSPBGA |
| 供應(yīng)商設(shè)備封裝: | 4-Microfoot |
| 包裝: | 帶卷 (TR) |