| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
|---|---|---|---|---|
| IPI023NE7N3 G | Infineon Technologies | MOSFET N-CH 75V 120A TO262-3 | 0 | 1:$6.50000 10:$5.80500 25:$5.22440 100:$4.75990 250:$4.29552 500:$3.85436 1,000:$3.25066 2,500:$3.08813 5,000:$2.96042 |
| BTS121A E3045A | Infineon Technologies | MOSFET N CH 100V 22A TO-220AB | 0 | 1:$10.15000 10:$9.19200 25:$8.42560 100:$7.65980 250:$6.89384 500:$6.31934 |
| BTS121A E3045A | Infineon Technologies | MOSFET N CH 100V 22A TO-220AB | 0 | 1:$10.15000 10:$9.19200 25:$8.42560 100:$7.65980 250:$6.89384 500:$6.31934 |
| IPB049N06L3 G | Infineon Technologies | MOSFET N-CH 60V 80A TO263-3 | 0 | 1:$2.04000 10:$1.75100 25:$1.57560 100:$1.42960 250:$1.28372 500:$1.10866 |
| IPB049N06L3 G | Infineon Technologies | MOSFET N-CH 60V 80A TO263-3 | 0 | 1,000:$0.84608 2,000:$0.78773 5,000:$0.75855 10,000:$0.72938 25,000:$0.71479 50,000:$0.70020 |
| IPB054N06N3 G | Infineon Technologies | MOSFET N-CH 60V 80A TO263-3 | 2,000 | 1:$1.99000 10:$1.70900 25:$1.53840 100:$1.39600 250:$1.25356 500:$1.08262 |
| IPB65R190CFD | Infineon Technologies | MOSFET N-CH 650V 17.5A TO263 | 0 | 1:$5.58000 10:$5.02000 25:$4.55560 100:$4.09070 250:$3.71880 500:$3.25396 |
| 類別: | 分離式半導體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 標準 |
| 漏極至源極電壓(Vdss): | 75V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 120A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 2.3 毫歐 @ 100A，10V |
| Id 時的 Vgs(th)（最大）: | 3.8V @ 273µA |
| 閘電荷(Qg) @ Vgs: | 206nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 14400pF @ 37.5V |
| 功率 - 最大: | 300W |
| 安裝類型: | 通孔 |
| 封裝/外殼: | TO-262-3，長引線，I²Pak，TO-262AA |
| 供應商設備封裝: | PG-TO262-3 |
| 包裝: | 管件 |