參數(shù)資料
型號(hào)： CVG639
英文描述： TRANSISTOR | BJT | NPN | 135V V(BR)CEO | 1A I(C) | TO-237
中文描述： 晶體管|晶體管|叩| 135V五（巴西）總裁| 1A條一（c）|至237
文件頁(yè)數(shù)： 1/3頁(yè)
文件大?。?/td> 43K
代理商： CVG639
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN/PNP COMPLEMENTARY SILICON PLANAR EPITAXIAL
TRANSISTORS
CVG639 (NPN)
CVG640 (PNP)
TO-237
EBC
Driver Stages of Audio Amplifier Application
ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C )
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter -Base Voltage
Collector Current Continuous
Peak
Base Current Continuous
Peak
Power Dissipation@ Ta=25 deg C
Derate Above 25 deg C
Power Dissipation@ Tc=25 deg C
Derate Above 25 deg C
Operating & Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
PD
VALUE
150
135
5.0
1.0
1.5
100
200
750
6.0
2.5
20
-55 to +150
UNITS
V
V
V
A
A
mA
mA
mW
mW/deg C
W
mW/deg C
deg C
PD
Tj, Tstg
SYMBOL
TEST CONDITION
UNITS
Min
135
150
5.0
-
-
-
-
25
80
15
Max
-
-
-
100
10
1.0
0.5
-
-
-
Collector -Emitter Voltage
Collector -Base Voltage
Emitter-Base Voltage
Collector-Cut off Current
VCEO
VCBO
VEBO
ICBO
IC=10mA, IB=0
IC=100uA.IE=0
IE=10uA, IC=0
VCB=30V, IE=0
VCB=30V, IE=0, Ta=125 deg C
IC=500mA, VCE=2V
VCE(Sat) * IC=500mA, IB=50mA
hFE
IC=5mA, VCE=2V
IC=150mA,VCE=2V *
IC=500mA,VCE=2V *
V
V
V
nA
uA
V
V
Base Emitter on Voltage
Collector Emitter Saturation Voltage
DC Current Gain
VBE(on) *
VALUE
IS / IECQC 700000
IS / IECQC 750100
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
Data Sheet
Page 1 of 3
相關(guān)PDF資料
PDF描述
CVG640 TRANSISTOR | BJT | PNP | 135V V(BR)CEO | 1A I(C) | TO-237
CW000502GIGABLAZE CW000502GigaBlaze transceiver cores G11 .25 micron
CW000504 CW000504 GigaBlaze transceiver cores G12 .18 micron
CW001004 Microprocessor
CW001007 Microprocessor
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