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參數(shù)資料
| 型號(hào)： | CSD655E |
| 英文描述： | TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 700MA I(C) | TO-92 |
| 中文描述： | 晶體管|晶體管|叩| 15V的五（巴西）總裁| 700mA的一（c）|至92 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 58K |
| 代理商： | CSD655E |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN EPITAXIAL PLANAR SILICON TRANSISTOR
CSD655
(9AW)
TO-92
BCE
Marking : As Below
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current
Peak
Collector Power Dissipation
Operating And Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Cut off Current
Base Emitter Voltage
Collector Emitter Saturation Voltage
DC Current Gain
Dynamic Characteristics
Transition Frequency
Collector Out-put Capacitance
SYMBOL
VCBO
VCEO
VEBO
IC
ICP
PC
Tj, Tstg
VALUE
30
15
5.0
700
1.0
500
-55 to +150
UNIT
V
V
V
mA
A
mW
deg C
SYMBOL
VCBO
VCEO
VEBO
ICBO
VBE(on)
VCE(Sat)
hFE
TEST CONDITION
IC=10uA, IE=0
IC=10mA, IB=0
IE=10uA, IC=0
VCB=20V, IE=0
IC=150mA,VCE=1V
IC=500mA,IB=50mA
IC=150mA,VCE=1V
MIN
30
15
5.0
-
-
-
250
TYP
-
-
-
-
-
-
-
MAX
-
-
-
1.0
1.0
0.50
1200
UNIT
V
V
V
uA
V
V
ft
Cob
VCE=1V,IC=150mA,
VCB=10V, IE=0
f=1MHz
VEB=0.5V, IC=0
f=1MHz
E : 300-800; F : 600-1200
CD
655
E
-
-
250
-
-
MHz
pF
30
In-put Capacitance
Cib
-
-
120
pF
hFE CLASSIFICATION D : 250-500;
MARKING
IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IECQC 700000
IS / IECQC 750100
Continental Device India Limited
Data Sheet
Page 1 of 3
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