2SC3866 ISC無(wú)錫固電超聲波用大功率三極管

iscSilicon NPN Power Transistor                2SC3866  
 
 
DESCRIPTION                                             
·High Breakdown Voltage-
  : V_(BR)CBO= 900V(Min)
·High Switching Speed
·High Reliability
 
APPLICATIONS
·Switching regulators
·Ultrasonic generators
·High frequency inverters
·General purpose power amplifiers
  

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL	PARAMETER	VALUE	UNIT
VCBO	Collector-Base Voltage	900	V
VCEO	Collector-Emitter Voltage	800	V
VEBO	Emitter-Base Voltage	10	V
IC	Collector Current-Continuous	3	A
IB	Base Current-Continuous	1	A
PC	Collector Power Dissipation @ TC=25℃	40	W
TJ	JunctionTemperature	150	℃
Tstg	StorageTemperature Range	-55~150	℃

 
THERMAL CHARACTERISTICS

SYMBOL	PARAMETER	MAX	UNIT
Rth j-c	Thermal Resistance,Junction to Case	3.0	℃/W

 
 
iscSilicon NPN Power Transistor                2SC3866 
 
ELECTRICAL CHARACTERISTICS
T_C=25℃unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS	MIN	TYP.	MAX	UNIT
V(BR)CEO	Collector-Emitter Breakdown Voltage	IC= 10mA; IB= 0	800			V
V(BR)CBO	Collector-Base Breakdown Voltage	IC= 1mA; IE= 0	900			V
V(BR)EBO	Emitter-Base Breakdown Voltage	IE= 1mA; IC= 0	10			V
VCE(sat)	Collector-Emitter Saturation Voltage	IC= 1A; IB= 0.2A			1.0	V
VBE(sat)	Base-Emitter Saturation Voltage	IC= 1A; IB= 0.2A			1.5	V
ICBO	Collector Cutoff Current	VCB= 900V; IE= 0			1.0	mA
IEBO	Emitter Cutoff Current	VEB= 10V; IC= 0			1.0	mA
hFE	DC Current Gain	IC= 1A ; VCE= 5V	10
Switching times
ton	Turn-on Time	IC= 2A , IB1= 0.4A; IB2= -0.8A RL=150Ω; PW=20μs; Duty≤2%			1.0	μs
tstg	Storage Time				4.0	μs
tf	Fall Time				0.8	μs

 
 
iscSilicon NPN Power Transistor                2SC3866