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參數(shù)資料
| 型號(hào)： | BUK9907-40ATC |
| 英文描述： | TrenchPLUS logic level FET |
| 中文描述： | TrenchPLUS場效應(yīng)晶體管邏輯電平 |
| 文件頁數(shù)： | 10/15頁 |
| 文件大?。?/td> | 355K |
| 代理商： | BUK9907-40ATC |
Philips Semiconductors
BUK9907-40ATC
TrenchPLUS logic level FET
Product data
Rev. 01 — 28 January 2002
10 of 15
9397 750 09139
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
V
DS
= 25 V
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
T
j
= 25
°
C; I
D
= 50 A
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values.
I
DG(CL)
=
2 mA
Fig 15. Drain-source clamping voltage as a function of
drain current; typical values.
I
D
= 10 A
Fig 16. Drain-source clamping voltage as a function of
gate current; typical values.
03ne80
0
20
40
60
80
100
I
D
(A)
0.0
1.0
2.0
3.0
V
GS
(V)
T
j
= 175 oC
T
j
= 25 oC
03ne87
0
1
2
3
4
5
0
20
40
60
80
100
120
Q
G
(nC)
V
GS
(V)
V
DS
= 14 V
V
DS
= 35 V
03ne82
48.5
49
49.5
50
50.5
51
0
2
4
6
8
10
I
D
(A)
V
DSR(CL)
(V)
T
j
= 175 oC
T
j
= 25 oC
T
j
= -55 oC
03ne83
40
42
44
46
48
50
52
54
0
1
2
3
-IGS(CL) (mA)
V
DSR(CL)
(V)
Tj = 175 oC
Tj = 25 oC
Tj = -55 oC
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| BUK9907-40ATC,127 | 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| BUK9907-55ATE,127 | 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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