參數(shù)資料
型號(hào)： BA1L4M
廠商： NEC Corp.
英文描述： NPN SILICON TRANSISTOR
中文描述： NPN硅晶體管
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 97K
代理商： BA1L4M
1998
Document No. D13582EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
COMPOUND TRANSISTOR
BA1L4Z
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
FEATURES
On-chip bias resistor
(R1 = 47 k
)
Complementary transistor with BN1L4Z
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage
VCEO
50
V
Emitter to base voltage
VEBO
5V
Collector current (DC)
IC(DC)
100
mA
Collector current (Pulse)
IC(pulse) *
200
mA
Total power dissipation
PT
250
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
*PW
≤ 10 ms, duty cycle ≤ 50 %
PACKAGE DRAWING (UNIT: mm)
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB = 50 V, IE = 0
100
nA
DC current gain
hFE1 **
VCE = 5.0 V, IC = 5.0 mA
135
270
600
DC current gain
hFE2 **
VCE = 5.0 V, IC = 50 mA
100
260
Collector saturation voltage
VCE(sat) **
IC = 5.0 mA, IB = 0.25 mA
0.05
0.2
V
Low level input voltage
VIL **
VCE = 5.0 V, IC = 100
A
0.57
0.5
V
High level input voltage
VIH **
VCE = 0.2 V, IC = 5.0 mA
4.0
1.7
V
Input resistance
R1
32.9
47
61.1
k
Turn-on time
ton
0.2
s
Storage time
tstg
5.0
s
Turn-off time
toff
VCC = 5.0 V, RL = 1.0 k
VI = 5.0 V, PW = 2.0
s
duty cycle
≤2 %
6.0
s
** Pulse test PW
≤ 350
s, duty cycle ≤ 2 %
hFE CLASSIFICATION
Marking
Q
P
K
hFE1
135 to 270
200 to 400
300 to 600
Electrode Connection
1. Emitte
2. Collector
3. Base
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BA1L4Z 制造商:NEC 制造商全稱(chēng):NEC 功能描述:on-chip resistor NPN silicon epitaxial transistor
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