參數(shù)資料
型號(hào): AMMP-6345-TR1G
元件分類: 放大器
英文描述: 18000 MHz - 45000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封裝: 5 X 5 MM, 2 MM HEIGHT, SURFACE MOUNT PACKAGE-8
文件頁數(shù): 7/10頁
文件大?。?/td> 685K
代理商: AMMP-6345-TR1G
6
Biasing and Operation
AMMP-6345 is a four stage balanced amplifier as shown in
Figure 13. The amplifier consists of two single-ended am-
plifiers, two Lange-couplers, an output power monitoring
detector, a reference diode for temperature compensation
for the detector, and a current mirror for the gate biasing.
AMMP-6345 has a current mirror, which minimizes gate
voltage distribution over the different wafer processes,
for the gate biasing. The recommended quiescent DC bias
condition for optimum gain, output power, efficiency, and
reliability is Vd=5 volts with Vg set for Id=300 mA. Minor
improvements in performance are possible depending
on the application. The drain bias voltage range is 3 to 5V.
AMMP-6345 can be biased either dual positive DC biasing
or single positive DC biasing as shown in Figure 14.
An optional output power detector network is also pro-
vided. The differential voltage between the Det-Ref and
Det-Out pads can be correlated with the RF power emerg-
ing from the RF output port. The detected voltage is given
by:
V = (Vref - Vdet) - Vofs
where :
Vref is the voltage at the DET_R port.
Vdet is a voltage at the DET_O port.
Vofs is the zero-input-power offset voltage.
There are three methods to calculate Vofs:
1. Vofscanbemeasuredbeforeeachdetectormeasurement
(by removing or switching off the power source and
measuring Vref - Vdet). This method gives an error due
to temperature drift of less than 0.01dB/50°C.
2. Vofs can be measured at a single reference temperature.
The drift error will be less than 0.25dB.
3. Vofs can both be characterized over temperature and
stored in a lookup table, or it can be measured at two
temperatures and a linear fit used to calculate Vofs at
any temperature. This method gives an error close to
the method #1.
The RF ports are AC coupled at the RF input to the first
stage and the RF output of the final stage. No ground
wired are needed since ground connections are made
with plated through-holes to the backside of the device.
Figure 13. AMMP-6345 Schematic
FOUR STAGE WIDEBAND AMPLIFIER
RFin
RFout
Vd
Vg
DET_O
DET_R
Vd
Current
Mirror
相關(guān)PDF資料
PDF描述
AMMP-6345-TR2G 18000 MHz - 45000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
AMMP-6420 6000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
AMMP-6522-TR1G 7000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
AMMP-6522-TR2G 7000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
AMMP-6545-BLKG 18000 MHz - 40000 MHz RF/MICROWAVE DOUBLE BALANCED MIXER, 12 dB CONVERSION LOSS-MAX
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