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參數(shù)資料
| 型號(hào)： | AMMC-6442-W10 |
| 元件分類： | 放大器 |
| 英文描述： | 37000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | DIE |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 274K |
| 代理商： | AMMC-6442-W10 |
2
Absolute Maximum Ratings[1,2,3,4]
Symbol
Parameters
Unit
Max
Vd
Positive Supply Voltage[2]
V
5.5
Vg
Gate Supply Voltage
V
-2 to 0
PD
Power Dissipation[2]
W6
Pin
CW Input Power[2]
dBm
20
Tch
Operating Channel Temp.[3,4]
°C
+150
Tstg
Storage Case Temp.
°C
-65 to +155
Tmax
Maximum Assembly Temp (30 sec max)
°C
+260
Note:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
2. Combinations of supply voltage, drain current, input power, and output power shall not exceed PD.
3. These ratings apply to each individual FET
4. The operating channel temperature will directly aect the device MTTF. For maximum life, it is recommended that junction temperatures be
maintained at the lowest possible levels.
DC Specications/ Physical Properties [1]
Symbol
Parameters and Test Conditions
Unit
Min
Typ
Max
Id(q)
Drain Supply Current
(Vd=5 V, Vg set for Id(q)Typical)
mA
700
Vg
Gate Supply Operating Voltage
(Id(q) = 700 (mA))
V
-1.3
-1
-0.7
Tch-bs
Thermal Resistance
(Channel-to-Base Plate)
°C/W
16.5
Tch
Channel Temperature
°C
150
Note:
1. Assume die epoxied to evaluation RF module at 92.25°C base plate temperature.
RF Specications [1, 2]
TA= 25°C, Vdd = 5.0 V, Idq =0.7 A, Vg = -1V, Zo=50
:
Symbol
Parameters and Test Conditions
Units
Minimum
Typical
Maximum
Freq
Operational Frequency
GHz
37
40
Gain
Small-signal Gain [2]
dB
20
23
P-1dB
Output Power at 1dB [2] Gain Compression
dBm
28
30
IM3
Relative third Order Inter-modulation Level
'f=20MHz, Po=+18dBm, SCL
dBc
37
RLin
Input Return Loss
dB
8
RLout
Output Return Loss
dB
8
Isolation
Reverse Isolation
dB
50
Note:
1. Small/Large -signal data measured at TA = 25°C.
2. 100% on wafer RF test is done at frequency= 37, 38 and 40GHz.
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| AMMC-6442-W50 | 37000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
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| AMMC-6545-W50 | 18000 MHz - 45000 MHz RF/MICROWAVE SINGLE BALANCED MIXER, 12 dB CONVERSION LOSS-MAX |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AMMC-6442-W50 | 功能描述:射頻放大器 Amp MMIC 35-40GHz Linear Power Amp RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| AMMC-6522-W50 | 制造商:Avago Technologies 功能描述:LNA IR MIXER 6-22GHZ - Gel-pak, waffle pack, wafer, diced wafer on film |
| AMMC-6530-W10 | 功能描述:射頻混合器 Mixer MMIC 6-30GHz RoHS:否 制造商:NXP Semiconductors 頻率范圍: 轉(zhuǎn)換損失——最大: 工作電源電壓:6 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
| AMMC-6530-W50 | 功能描述:射頻混合器 Mixer MMIC 6-30GHz RoHS:否 制造商:NXP Semiconductors 頻率范圍: 轉(zhuǎn)換損失——最大: 工作電源電壓:6 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
| AMMC-6545 | 制造商:AVAGO 制造商全稱:AVAGO TECHNOLOGIES LIMITED 功能描述:18 to 45 GHz Sub - Harmonic Mixer LO Frequency: 9-24GHz |
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