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參數(shù)資料
| 型號： | AMMC-5620-W50 |
| 元件分類： | 放大器 |
| 英文描述： | 6000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 0.0555 X 0.0397 INCH, DIE, 7 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 581K |
| 代理商： | AMMC-5620-W50 |
2
AMMC-5620 DC Specifications/Physical Properties [1]
Symbol
Parameters and Test Conditions
Units
Min.
Typical
Max.
VDD
Recommended Drain Supply Current
V
5
IDD
Total Drain Supply Current ( VDD = 5V)
mA
70
95
130
IDD
Total Drain Supply Current ( VDD = 7V)
mA
105
qch-b
Thermal Resistance [3]
(Backside temperature (Tb) = 25 °C
°C/W
33
Notes:
1. Backside temperature Tb = 25°C unless otherwise noted
2. Channel-to-backside Thermal Resistance (qch-b) = 47°C/W at Tchannel (Tc) = 150°C as measured using infrared microscopy. Thermal Resis-
tance at backside temperature (Tb) = 25°C calculated from measured data.
AMMC-5620 RF Specifications [3]
Tb = 25°C, VDD=5V, IDD=95 mA, Zo=50
Symbol
Parameters and Test Conditions
Units
Min.
Typical
Max.
S21 2
Small-signal Gain
dB
16
19
22
Gain Slope
Positive Small-signal Gain Slope
dB/GHz
+0.21
RLin
Input Return Loss
dB
10
13
RLout
Output Return Loss
dB
10
14
S12 2
Reverse Isolation
dB
- 55
P-1dB
Output Power at 1 dB Gain Compression @ 20 GHz
dBm
12.5
15
Psat
Saturated Output Power (3dB Gain Compression) @ 20 GHz
dBm
14.5
17
OIP3
Output 3rd Order Intercept Point @ 20 GHz
dBm
23.5
NF
Noise Figure @ 20 GHz
dB
4.2
5.0
Notes:
3. 100% on-wafer RF test is done at frequency = 6, 13 and 20 GHz, except as noted.
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