參數(shù)資料
型號(hào): AM29DS323DT120
廠商: Advanced Micro Devices, Inc.
英文描述: 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
中文描述: 32兆位(4個(gè)M × 8位/ 2米x 16位),1.8伏的CMOS只,同時(shí)作業(yè)快閃記憶體
文件頁數(shù): 38/54頁
文件大?。?/td> 1013K
代理商: AM29DS323DT120
42
Am29DS323D
P R E L I M I NARY
AC CHARACTERISTICS
OE#
CE#
Addresses
VCC
WE#
Data
2AAh
SA
tAH
tWP
tWC
tAS
tWPH
555h for chip erase
10 for Chip Erase
30h
tDS
tVCS
tCS
tDH
55h
tCH
In
Progress
Complete
tWHWH2
VA
Erase Command Sequence (last two cycles)
Read Status Data
RY/BY#
tRB
tBUSY
Notes:
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status”).
2. These waveforms are for the word mode.
Figure 19.
Chip/Sector Erase Operation Timings
相關(guān)PDF資料
PDF描述
AM29DS323DT120EIN Hex Inverters 14-TSSOP -40 to 85
AM29F017D-120E4C 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F017D-120E4E 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F017D-120E4I 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F017D-120EC 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
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