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參數(shù)資料
| 型號(hào)： | AH312-1S8G |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類(lèi)： | 放大器 |
| 英文描述： | 400 MHz - 2300 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | GREEN, SOIC-8 |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大小： | 369K |
| 代理商： | AH312-1S8G |
Specifications and information are subject to change without notice.
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com, www.TriQuint.com
Page 1 of 7 March 2008
AH312-1
2 Watt, High Linearity InGaP HBT Amplifier
Product Features
400 – 2300 MHz
18 dB Gain @ 900 MHz
+33 dBm P1dB
+51 dBm Output IP3
+5V Single Positive Supply
MTTF > 100 Years
Lead-free/green/RoHS-compliant
SOIC-8 SMT Package
Applications
Final stage amplifiers for Repeaters
Mobile Infrastructure
Product Description
The AH312-1 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT is
able to achieve high performance for various narrowband-
tuned application circuits with up to +49 dBm OIP3 and
+33 dBm of compressed 1dB power. It is housed in a lead-
free/green/RoHS-compliant SOIC-8 package. All devices are
100% RF and DC tested.
The AH312-1 is a screened version of the AH312 to
minimize the amount of device impedance variation.
Sampling of parts from the standard AH312 are tested in a
WJ fixture to have the devices’ input resonance frequency
be within a 20 MHz window.
The AH312-1 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required.
An internal active bias allows the
AH312-1 to maintain high linearity over temperature and
operate directly off a single +5V supply. This combination
makes the device an excellent candidate for transceiver line
cards in current and next generation multi-carrier 3G base
stations.
Functional Diagram
Function
Pin No.
Vref
1
Input
3
Output
6, 7
Vbias
8
GND
Backside Paddle
N/C or GND
2, 4, 5
Specifications
(1)
Parameter
Units Min
Typ
Max
Operational Bandwidth
MHz
400
2300
Test Frequency
MHz
2140
Gain
dB
9
10
Input R.L.
dB
20
Output R.L.
dB
6.8
Output P1dB
dBm
+32
+33.2
Output IP3
(2)
dBm
+47
+48
W-CDMA Channel Power
@ -45 dBc ACLR, 2140 MHz
dBm
+25.3
Noise Figure
dB
7.7
S11 Resonance
(3)
GHz
2.15
2.17
Operating Current Range, Icc
(4)
mA
700
800
900
Device Voltage, Vcc
V
+5
1. Test conditions unless otherwise noted: 25C, +5V Vsupply, 2140 MHz, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +17 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. The S11 resonance is measured in a WJ fixture that tuned for performance at a single frequency
point of 2140 MHz. This specification is guaranteed by a sampling plan of parts within a given
wafer. Only wafers which meet the sampling plan requirements are shipped.
4. This corresponds to the quiescent current or operating current under small-signal conditions into
pins 6, 7, and 8. It is expected that the current can increase by an additional 200 mA at P1dB. Pin
1 is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull
22mA of current when used with a series bias resistor of R1=15. (ie. total device current
typically will be 822 mA.)
Absolute Maximum Rating
Parameter
Rating
Storage Temperature
-65 to +150 °C
RF Input Power (continuous)
+28 dBm
Device Voltage
+8 V
Device Current
1400 mA
Device Power
8 W
Thermal Resistance, Rth
17.5°C/W
Junction Temperature
+200°C
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance
(5)
Parameter
Units
Typical
Frequency
MHz
900
1960
2140
S21 – Gain
dB
18
11
10
S11 – Input R.L.
dB
-18
-19
-20
S22 – Output R.L.
dB
-11
-6.8
Output P1dB
dBm
+33
+33.4
+33.2
Output IP3
dBm
+49
+51
+48
IS-95A Channel Power
@ -45 dBc ACPR
dBm
+27
+27.5
W-CDMA Channel Power
@ -45 dBc ACLR
dBm
+25.3
Noise Figure
dB
8.0
7.3
7.7
Device Bias
(3)
+5 V @ 800 mA
5. Typical parameters reflect performance in a tuned application circuit at +25° C.
Ordering Information
Part No.
Description
AH312-1S8G
2 Watt, High Linearity InGaP HBT Amplifier
(lead-free/green/RoHS-compliant SOIC-8 package)
AH312-S8PCB900
900 MHz Evaluation Board
AH312-S8PCB1960
1960 MHz Evaluation Board
AH312-S8PCB2140
2140 MHz Evaluation Board
Standard tape / reel size = 500 pieces on a 7” reel
1
2
3
4
8
7
6
5
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| AH312 | 400 MHz - 2300 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
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| AH314 | 2300 MHz - 2900 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| AH31 | 50 MHz - 500 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AH312-RFID | 制造商:WJCI 制造商全稱:WJCI 功能描述:2 Watt, High Linearity InGaP HBT Amplifier |
| AH312-S8 | 制造商:WJCI 制造商全稱:WJCI 功能描述:2 Watt, High Linearity InGaP HBT Amplifier |
| AH312-S8G | 功能描述:射頻放大器 400-2300MHz 18dB Gain@900MHz RoHS:否 制造商:Skyworks Solutions, Inc. 類(lèi)型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類(lèi)型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| AH312-S8PCB1960 | 功能描述:射頻開(kāi)發(fā)工具 1960MHz Eval Brd 11dB Gain RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類(lèi)型:Wireless Audio 工具用于評(píng)估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V |
| AH312-S8PCB2140 | 功能描述:射頻開(kāi)發(fā)工具 2140MHz Eval Brd 10dB Gain RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類(lèi)型:Wireless Audio 工具用于評(píng)估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V |
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