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參數(shù)資料
| 型號： | AA035P3-00 |
| 廠商： | SKYWORKS SOLUTIONS INC |
| 元件分類： | 放大器 |
| 英文描述： | 31000 MHz - 35000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | DIE |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 474K |
| 代理商： | AA035P3-00 |
Skyworks Solutions, Inc. [978] 241-7000
Fax [978] 241-7906 Email sales@skyworksinc.com www.skyworksinc.com
1
Specifications subject to change without notice. 11/02A
31–35 GHz GaAs MMIC
Driver Amplifier
Features
■ Single Bias Supply Operation (5 V)
■ 19 dB Typical Small Signal Gain
■ 17 dBm Typical P1 dB Output Power
at 35 GHz
■ 0.25 m Ti/Pd/Au Gates
■ 100% On-Wafer RF and DC Testing
■ 100% Visual Inspection to MIL-STD-883
MT 2010
Chip Outline
AA035P3-00
Description
Skyworks’ three-stage reactively-matched Ka band
GaAs MMIC driver amplifier has a typical P1 dB of 17 dBm
with 18 dB associated gain at 35 GHz. The chip uses
Skyworks’ proven 0.25
m MESFET technology, which is
based upon MBE layers and electron beam lithography
for the highest uniformity and repeatability. The FETs
employ surface passivation to ensure a rugged, reliable
part with through-substrate via holes and gold-based
backside metallization to facilitate solder or epoxy die
attach processes. The amplifier is a self-bias design
requiring a single positive drain bias to one of any three
bonding sites. All chips are screened for S-parameters
prior to shipment for guaranteed performance. A broad
range of applications exist in both the high reliability and
commercial areas where high gain and power are
required.
Parameter
Condition
Symbol
Min.
Typ.3
Max.
Unit
Drain Current
IDS
275
350
mA
Small Signal Gain
F= 31–35 GHz
G
15
19
dB
Noise Figure1
F= 35 GHz
NF
10.5
dB
Input Return Loss
F= 31–35 GHz
RLI
-14
-10
dB
Output Return Loss
F= 31–35 GHz
RLO
-16
-10
dB
Output Power at 1 dB Gain Compression
F= 35 GHz
P1 dB
15
17
dBm
Saturated Output Power
F= 35 GHz
PSAT
16
19
dBm
Two-Tone Output Third-Order Intercept1
F = 35 GHz
OIP3
28
dBm
Thermal Resistance2
ΘJC
66
°C/W
Electrical Specifications at 25°C (VDS = 5 V)
1. Not measured on a 100% basis.
2. Calculated value based on measurement of discrete FET.
3. Typical represents the median parameter value across the specified
frequency range for the median chip.
0.000
1.250
1.905
3.810
1.554
2.471
3.386
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Characteristic
Value
Operating Temperature (TC)
-55°C to +90°C
Storage Temperature (TST)
-65°C to +150°C
Bias Voltage (VD)7 VDC
Power In (PIN)
19 dBm
Junction Temperature (TJ)
175°C
Absolute Maximum Ratings
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