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參數(shù)資料
| 型號： | AA032P1-00 |
| 元件分類： | 放大器 |
| 英文描述： | 30000 MHz - 36000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 163K |
| 代理商： | AA032P1-00 |
Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com
1
Specifications subject to change without notice. 12/99A
30–36 GHz GaAs MMIC
Power Amplifier
Features
I Single Gate and Drain Biases
I 25 dBm Typical P1 dB Output Power
at 31 GHz
I 11 dB Typical Small Signal Gain
I 0.25 m Ti/Pd/Au Gates
I 100% On-Wafer RF and DC Testing
I 100% Visual Inspection to MIL-STD-883
MT 2010
Chip Outline
AA032P1-00
Description
Alpha’s two-stage reactively-matched Ka band GaAs
MMIC power amplifier has a typical P1 dB of 25 dBm with
10 dB associated gain and 15% power added efficiency
at
31
GHz.
The
chip
uses
Alpha’s
proven
0.25
m MESFET technology, and is based upon MBE
layers and electron beam lithography for the highest
uniformity and repeatability. The FETs employ surface
passivation to ensure a rugged, reliable part with
through-substrate via holes and gold-based backside
metallization to facilitate solder or epoxy die attach
processes. Single gate and drain bias pads cover both
stages, with the added convenience that the chip can be
wire bonded from either side for either bias. All chips are
screened for gain, output power, efficiency and S-
parameters prior to shipment for guaranteed performance.
A broad range of applications exist in both the military and
commercial areas where high power and gain are
required.
Parameter
Condition
Symbol
Min.
Typ.2
Max.
Unit
Drain Current (at Saturation)
IDS
400
450
mA
Small Signal Gain
F = 30–31, 34–36 GHz
G
8
11
dB
Input Return Loss
F = 30–31, 34–36 GHz
RLI
-7
-6
dB
Output Return Loss
F = 30–31, 34–36 GHz
RLO
-8
-6
dB
Output Power at 1 dB Gain Compression
F = 31 GHz
P1 dB
24
25
dBm
Saturated Output Power
F = 31 GHz
PSAT
25
27
dBm
Gain at Saturation
F = 31 GHz
GSAT
8dB
Thermal Resistance1
ΘJC
42
°C/W
Electrical Specifications at 25°C (VDS = 6 V, VGS = -1 V)
1. Calculated value based on measurement of discrete FET.
2. Typical represents the median parameter value across the specified
frequency range for the median chip.
1.937
1.099
0.597
1.099
0.597
0.000
2.166
0.120
1.143
2.285
1.929
2.415
0.107
2.179
0.000
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Characteristic
Value
Operating Temperature (TC)
-55°C to +90°C
Storage Temperature (TST)
-65°C to +150°C
Bias Voltage (VD)7 VDC
Power In (PIN)
22 dBm
Junction Temperature (TJ)
175°C
Absolute Maximum Ratings
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