- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄92888 > AA028N1-00 24000 MHz - 30000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER PDF資料下載
參數(shù)資料
| 型號： | AA028N1-00 |
| 元件分類： | 放大器 |
| 英文描述： | 24000 MHz - 30000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | CHIP |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 96K |
| 代理商： | AA028N1-00 |
Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com
1
Specifications subject to change without notice. 1/01A
24–30 GHz GaAs MMIC
Low Noise Amplifier
Features
s Single Bias Supply Operation (4.5 V)
s 3.0 dB Typical Noise Figure at 28 GHz
s 17 dB Typical Small Signal Gain
s 0.25
m Ti/Pd/Au Gates
s 100% On-Wafer RF, DC and Noise
Figure Testing
s 100% Visual Inspection to MIL-STD-883
MT 2010
Chip Outline
AA028N1-00
Description
Alpha’s three-stage reactively-matched 24–30 GHz
MMIC low noise amplifier has typical small signal gain of
17 dB with a typical noise figure of 3.0 dB at 28 GHz.
The chip uses Alpha’s proven 0.25
m low noise PHEMT
technology, and is based upon MBE layers and electron
beam lithography for the highest uniformity and
repeatability. The FETs employ surface passivation to
ensure a rugged reliable part with through-substrate via
holes and gold-based backside metallization to facilitate
a conductive epoxy die attach process.
Parameter
Condition
Symbol
Min.
Typ.3
Max.
Unit
Drain Current
IDS
24
50
mA
Small Signal Gain
F = 24–30 GHz
G
15
17
dB
Noise Figure
F = 28 GHz
NF
3.0
3.5
dB
Input Return Loss
F = 24–30 GHz
RLI
-11
-6
dB
Output Return Loss
F = 24–30 GHz
RLO
-14
-10
dB
Output Power at 1 dB Gain Compression1
F = 28 GHz
P1 dB
7
dBm
Thermal Resistance2
ΘJC
92
°C/W
Electrical Specifications at 25°C (VDS = 4.5 V)
0.000
0.530
0.087
0.235
1.056
2.355
2.268
1.957
0.124
1.250
1.084
1.605
1.829
2.091
2.245
1.162
1.172
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Characteristic
Value
Operating Temperature (TC)
-55°C to +90°C
Storage Temperature (TST)
-65°C to +150°C
Bias Voltage (VD)6 VDC
Power In (PIN)
10 dBm
Junction Temperature (TJ)
175°C
Absolute Maximum Ratings
1. Not measured on a 100% basis.
2. Calculated value based on measurement of discrete FET.
3. Typical represents the median parameter value across the specified
frequency range for the median chip.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AA028N1-99 | 23000 MHz - 30000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| AA028P1-00 | 27000 MHz - 29000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| AA028P2-00 | 27000 MHz - 31000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| AA031P1-00 | 28000 MHz - 32000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| AA031P1-A2 | 28000 MHz - 32000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AA028N1-99 | 制造商:ALPHA 制造商全稱:ALPHA 功能描述:23-30 GHz Low Noise Amplifier |
| AA028N1-A2 | 制造商:ALPHA 制造商全稱:ALPHA 功能描述:24-30 GHz Surface Mount Low Noise Amplifier |
| AA028P100 | 制造商:ALPHA INDUSTRIES 功能描述: |
| AA028P1-00 | 制造商:ALPHA 制造商全稱:ALPHA 功能描述:27-29 GHz GaAs MMIC Power Amplifier |
| AA028P2-00 | 制造商:ALPHA 制造商全稱:ALPHA 功能描述:27-31 GHz GaAs MMIC Driver Amplifier |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。