參數(shù)資料
型號(hào): 71V25781YSA166BGI
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: SRAM
英文描述: 256K X 18 CACHE SRAM, 3.5 ns, PBGA119
封裝: BGA-119
文件頁數(shù): 22/22頁
文件大?。?/td> 627K
代理商: 71V25781YSA166BGI
6.42
IDT71V25761, IDT71V25781, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
9
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range(1)
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (VDD = 3.3V ± 5%)
Figure 2. Lumped Capacitive Load, Typical Derating
Figure 1. AC Test Load
AC Test Load
AC Test Conditions
(VDDQ = 2.5V)
NOTES:
1. All values are maximum guaranteed values.
2. At f = fMAX, inputs are cycling at the maximum frequency of read cycles of 1/tCYC while
ADSC = LOW; f=0 means no input lines are changing.
3. For I/Os VHD = VDDQ - 0.2V, VLD = 0.2V. For other inputs VHD = VDD - 0.2V, VLD = 0.2V.
VDDQ/2
50
I/O
Z0 =50
5297 drw 06
,
1
2
3
4
20 30 50
100
200
tCD
(Typical, ns)
Capacitance (pF)
80
5
6
5297 drw 07
,
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
|ILI|
Input Leakage Current
VDD = Max., VIN = 0V to VDD
___
5 A
|ILZZ|
ZZ,
LBO and JTAG Input Leakage Current(1)
VDD = Max., VIN = 0V to VDD
___
30
A
|ILO|
Output Leakage Current
VOUT = 0V to VDDQ, Device Deselected
___
5 A
VOL
Output Low Voltage
IOL = +6mA, VDD = Min.
___
0.4
V
VOH
Output High Voltage
IOH = -6mA, VDD = Min.
2.0
___
V
5297 tbl 08
Symbol
Parameter
Test Conditions
200MHz
183MHz
166MHz
Unit
Com'l Only
Com'l
Ind
Com'l
Ind
IDD
Operating Power Supply
Current
Device Selected, Outputs Open, VDD = Max.,
VDDQ = Max., VIN > VIH or < VIL, f = fMAX(2)
360
340
350
320
330
mA
ISB1
CMOS Standby Power
Supply Current
Device Deselected, Outputs Open, VDD = Max.,
VDDQ = Max., VIN > VHD or < VLD, f = 0(2,3)
30
35
30
35
mA
ISB2
Clock Running Power
Supply Current
Device Deselected, Outputs Open, VDD = Max.,
VDDQ = Max., VIN > VHD or < VLD, f = fMAX(2,3)
130
120
130
110
120
mA
IZZ
Full Sleep Mode Supply
Current
ZZ > VHD, VDD = Max.
30
35
30
35
mA
5297 tbl 09
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Timing Reference Levels
AC Test Load
0 to 2.5V
2ns
(VDDQ/2)
See Figure 1
5297 tbl 10
NOTE:
1. The
LBO, TMS, TDI, TCK and TRST pins will be internally pulled to VDD and the ZZ pin will be internally pulled to VSS if they are not actively driven in the application.
相關(guān)PDF資料
PDF描述
71V35761YSA183BGI8 128K X 36 CACHE SRAM, 3.3 ns, PBGA119
71V35781S183PF 256K X 18 CACHE SRAM, 3.3 ns, PQFP100
7201LA20JGI 512 X 9 OTHER FIFO, 20 ns, PQCC32
72031-111LF 36 CONTACT(S), MALE, STRAIGHT TWO PART BOARD CONNECTOR, PRESS FIT
72031-111 36 CONTACT(S), MALE, STRAIGHT TWO PART BOARD CONNECTOR, PRESS FIT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
71V30L25TF 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Kx8 ASYNCHRONOUS 3.3V DUAL-PORT RAM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
71V30L25TF8 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Kx8 ASYNCHRONOUS 3.3V DUAL-PORT RAM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
71V30L25TFG 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Kx8 ASYNCHRONOUS 3.3V DUAL-PORT RAM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
71V30L25TFG8 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Kx8 ASYNCHRONOUS 3.3V DUAL-PORT RAM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
71V30L25TFGI 制造商:Integrated Device Technology Inc 功能描述:1KX8 LOW POWER 8K 3.3V DUAL PORT RAM - Bulk