參數(shù)資料
型號： 70V657S12BFG8
廠商： INTEGRATED DEVICE TECHNOLOGY INC
元件分類： SRAM
英文描述： 32K X 36 DUAL-PORT SRAM, 12 ns, PBGA208
封裝： 15 X 15 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, FPBGA-208
文件頁數(shù)： 23/24頁
文件大小： 316K
代理商： 70V657S12BFG8
IDT70V659/58/57S
High-Speed 3.3V 128/64/32K x 36 Asynchronous Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
8
Absolute Maximum Ratings(1)
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
2. VTERM must not exceed VDD + 150mV for more than 25% of the cycle time
or 4ns maximum, and is limited to < 20mA for the period of VTERM > VDD
+ 150mV.
3. Ambient Temperature under DC Bias. No AC Conditions. Chip Deselected.
Symbol
Rating
Commercial
& Industrial
Unit
VTERM(2)
(VDD)
VDD Terminal Voltage
with Respect to GND
-0.5 to + 4.6
V
TBIAS(3)
Temperature Under Bias
-55 to +125
o
C
TSTG
Storage Temperature
-65 to +150
o
C
TJN
Junction Temperature
+150
o
C
IOUT(For VDDQ = 3.3V) DC Output Current
50
mA
IOUT(For VDDQ = 2.5V) DC Output Current
40
mA
4869 tbl 05
Recommended DC Operating
Conditions with VDDQ at 3.3V
NOTES:
1. VIL > -1.5V for pulse width less than 10 ns.
2. VTERM must not exceed VDDQ + 150mV.
3. To select operation at 3.3V levels on the I/Os and controls of a given port, the
OPT pin for that port must be set to VDD (3.3V), and VDDQX for that port must be
supplied as indicated above.
Symbol
Parameter
Min.
Typ.
Max.
Unit
VDD
Core Supply Voltage
3.15
3.3
3.45
V
VDDQ
I/O Supply Voltage(3)
3.15
3.3
3.45
V
VSS
Ground
0
V
VIH
Input High Voltage
(Address & Control Inputs)(3)
2.0
____
VDDQ + 150mV(2)
V
VIH
Input High Voltage - I/O(3)
2.0
____
VDDQ + 150mV(2)
V
VIL
Input Low Voltage
-0.3(1)
____
0.8
V
4869 tbl 07
Recommended DC Operating
Conditions with VDDQ at 2.5V
NOTES:
1. VIL > -1.5V for pulse width less than 10 ns.
2. VTERM must not exceed VDDQ + 100mV.
3. To select operation at 2.5V levels on the I/Os and controls of a given port, the
OPT pin for that port must be set to VSS (0V), and VDDQX for that port must be
supplied as indicated above.
Symbol
Parameter
Min. Typ.
Max.
Unit
VDD
Core Supply Voltage
3.15
3.3
3.45
V
VDDQ
I/O Supply Voltage(3)
2.4
2.5
2.6
V
VSS
Ground
0
V
VIH
Input High Voltage(3)
(Address & Control Inputs)
1.7
____
VDDQ + 100mV(2)
V
VIH
Input High Voltage - I/O(3)
1.7
____
VDDQ + 100mV(2)
V
VIL
Input Low Voltage
-0.5(1)
____
0.7
V
4869 tbl 06
Maximum Operating
Temperature and Supply Voltage(1)
NOTE:
1. This is the parameter TA. This is the "instant on" case temperature.
Grade
Ambient
Temperature
GND
VDD
Commercial
0OC to +70OC0V
3.3V
+ 150mV
Industrial
-40OC to +85OC0V
3.3V
+ 150mV
4869 tbl 04
NOTES:
1. These parameters are determined by device characterization, but are not
production tested.
2. COUT also references CI/O.
Capacitance(1)
(TA = +25°C, F = 1.0MHZ) PQFP ONLY
Symbol
Parameter
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 0V
8
pF
COUT(2)
Output Capacitance
VOUT = 0V
10.5
pF
4869 tbl 08
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