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參數(shù)資料
| 型號： | 2SD2108 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Triple Diffused(三倍擴(kuò)散NPN晶體管) |
| 中文描述： | 硅npn型三重?cái)U(kuò)散（三倍擴(kuò)散npn型晶體管） |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 34K |
| 代理商： | 2SD2108 |
2SD2108
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Rating
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
P
C
P
C
*
Tj
80
V
Collector to emitter voltage
80
V
Emitter to base voltage
7
V
Collector current
8
A
Collector peak current
12
A
Collector power dissipation
2
W
1
25
Junction temperature
150
°C
Storage temperature
Tstg
–55 to +150
°C
C to E diode forward current
Note:
1. Value at T
C
= 25°C.
I
D
*
1
8
A
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
80
—
—
V
I
C
= 0.1 mA, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
80
—
—
V
I
C
= 25 mA, R
BE
=
∞
Emitter to base breakdown
voltage
V
(BR)EBO
7
—
—
V
I
E
= 50 mA, I
C
= 0
Collector cutoff current
I
CBO
I
CEO
h
FE
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
V
D
—
—
10
μA
V
CB
= 65 V, I
E
= 0
V
CE
= 65 V, R
BE
=
∞
V
CE
= 3 V, I
C
= 4 A*
I
C
= 4 A, I
B
= 8 mA*
I
C
= 8 A, I
B
= 80 mA*
I
C
= 4 A, I
B
= 8 mA*
I
C
= 8 A, I
B
= 80 mA*
I
D
= 8 A*
—
—
10
DC current transfer ratio
1000
—
20000
1
Collector to emitter saturation
—
—
1.5
V
1
voltage
—
—
3.0
1
Base to emitter saturation
—
—
2.0
V
1
voltage
—
—
3.5
1
C to E diode forward voltage
Note:
1. Pulse test.
—
—
3.0
V
1
See switching characteristic curve of 2SD1604.
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