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參數(shù)資料
| 型號： | 1N5281BRL2 |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 200 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 |
| 封裝： | HERMETIC SEALED, GLASS, DO-204AH, 2 PIN |
| 文件頁數(shù)： | 7/10頁 |
| 文件大?。?/td> | 472K |
| 代理商： | 1N5281BRL2 |
1N5221B through 1N5281B Series
http://www.takcheong.com
6
APPLICATION NOTE - ZENER VOLTAGE
Since the actual voltage available from a given zener
diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions
in order to calculate its value. The following procedure is
recommended:
Lead Temperature, TL, should be determined from:
TL = θLAPD + TA.
θLA is the lead-to-ambient thermal resistance (°C/W) and PD
is the power dissipation. The value for
θLA will vary and
depends on the device mounting method.
θLA is generally 30
to 40
°C/W for the various clips and tie points in common use
and for printed circuit board wiring.
The temperature of the lead can also be measured using a
thermocouple placed on the lead as close as possible to the
tie point. The thermal mass connected to the tie point is
normally large enough so that it will not significantly
respond to heat surges generated in the diode as a result of
pulsed operation once steady-state conditions are achieved.
Using the measured value of TL, the junction temperature
may be determined by:
TJ = TL + TJL.
TJL is the increase in junction temperature above the lead
temperature and may be found from Figure 2 for dc power:
TJL = θJLPD.
For worst-case design, using expected limits of IZ, limits
of PD and the extremes of TJ(TJ) may be estimated.
Changes in voltage, VZ, can then be found from:
V = θVZTJ.
θVZ, the zener voltage temperature coefficient, is found
from Figures 4 and 5.
Under high power-pulse operation, the zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current
excursions as low as possible.
Surge limitations are given in Figure 7. They are lower
than would be expected by considering only junction
temperature, as current crowding effects cause temperatures
to be extremely high in small spots, resulting in device
degradation should the limits of Figure 7 be exceeded.
LL
500
400
300
200
100
0
0.2
0.4
0.6
0.8
1
2.4-60 V
62-200 V
L , LEAD LENGTH TO HEAT SINK (INCH)
JL
,JUNCTION
T
O
LEAD
THERMA
L
RESISTANC
E
(
°
C/W)
θ
Figure 2. Typical Thermal Resistance
TYPICAL LEAKAGE CURRENT
AT 80% OF NOMINAL
BREAKDOWN VOLTAGE
+2
5°C
+12
5°C
1000
7000
5000
2000
1000
700
500
200
100
70
50
20
10
7
5
2
1
0.7
0.5
0.2
0.1
0.07
0.05
0.02
0.01
0.007
0.005
0.002
0.001
34
5
6
7
8
9
10
11
12
VZ , NOMINAL ZENER VOLTAGE (VOLTS)
I
,LEAKAGE
CURRENT
(
A
)
R
Figure 3. Typical Leakage Current
13
14
15
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 1N5281BUR-1 | 制造商:Microsemi Corporation 功能描述:ZENER SGL 200V 5% 500MW 2PIN DO-213AA - Bulk |
| 1N5282 | 功能描述:整流器 Vr/80V Io/200mA BULK RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 1N5282 | 制造商:Fairchild Semiconductor Corporation 功能描述:Diode |
| 1N5282_T50R | 功能描述:整流器 Vr/80V Io/200mA T/R RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 1N5282TR | 功能描述:整流器 Vr/80V Io/200mA T/R RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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